Highest efficiency | Enhanced performance with GaN Technology | Reduced OPEX and CAPEX/TCO

The rising demand for digitisation and generative artificial intelligence (AI) is driving the rapid expansion of hyperscale data centres and 5G infrastructure.

How GaN Technology Improves on Established Technologies
The need to maximise data computing space at server and rack level and deliver more power per unit volume while minimising size is creating a sweet spot for gallium nitride (GaN) technology. Compared to conventional technologies such as Si or SiC MOSFETs, GaN enables higher power efficiency at higher switching frequency and higher power density, making it an ideal choice for powering the next generation of data centres.

The leading silicon-based data centre power supplies offer a power density of 60-70 W/in³ but are limited to 96% efficiency. Achieving the ORV3 target of 97.5% efficiency with silicon switches requires a 40% increase in size, reducing power density to around 50 W/in³. This creates a trade-off between power density and efficiency, as both cannot be optimised simultaneously.

SiC switches present an alternative, achieving a high-efficiency power supply, but at the cost of increased complexity, size and expense.

GaN technology offers a step forward by enabling power densities exceeding 100 W/in³ while achieving 98% efficiency, making it the optimum solution for next-generation high-power rack PSUs.

An easy drop-in replacement
CGD's ICeGaN® P2 Series offers ease-of-use GaN HEMTs for immediate Design-In and several integrated features to further improve efficiency and system reliability.

Paralleling of devices is also possible to control larger loads.

Ready for GaN Technology for Data Centres and Telecom?
Contact Cambridge GaN Devices today to enquire about its applications, and our products and services.

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